LEMONA

Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A IXYS

Product Code: MKI100-12F8
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Product description

Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A IXYS

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Specifications

SKU
U-259881
Brand
Product code
MKI100-12F8

Supplier product description

Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A

Useful information

Supplier parameters

Product code
MKI100-12F8
Product ID
U-259881
Case
E3-Pack
Collector current
125A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
IXYS
Max. off-state voltage
1.2kV
Mechanical mounting
screw
Power dissipation
640W
Pulsed collector current
200A
Semiconductor structure
diode/transistor
Technology
NPT
Type of semiconductor module
IGBT
Topology
H-bridge
Brand
IXYS
Supplier's product code
MKI100-12F8
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .