LEMONA

Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 STARPOWER SEMICONDUCTOR

Product Code: GD35PJY120L3S
The photo is for illustration only. Please refer to the description for exact product specifications.
More similar products

Price range

AmountPrice incl. VAT (pcs)
1-3
94.5094.50
4-15
83.40
16+
74.95
wholesale

Min. qty: 1

Multiplier: 1

Total:

94.50
2026-09-24 Estimated delivery

*Total delivery cost will be calculated in the checkout.

Warehouse in Europe

Warehouse in Europe

90% positive feedback

94%+ positive feedback

30 day money back guarantee

30 day money back guarantee

Product description

Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 STARPOWER SEMICONDUCTOR

Specifications

SKU
U-2964930
Product code
GD35PJY120L3S

Supplier product description

Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0

Supplier parameters

Supplier's product code
GD35PJY120L3S
Product ID
U-2964930
Case
L3.0
Collector current
35A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
STARPOWER SEMICONDUCTOR
Max. off-state voltage
1.2kV
Mechanical mounting
screw
Pulsed collector current
70A
Semiconductor structure
diode/transistor
Technology
Advanced Trench FS IGBT
Type of semiconductor module
IGBT
Topology
three-phase diode bridge
Product code
GD35PJY120L3S
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .