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Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD INFINEON TECHNOLOGIES

Product Code: IPD80R1K2P7
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Product description

Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD INFINEON TECHNOLOGIES

Useful information


Specifications

SKU
U-216896
Product code
IPD80R1K2P7

Supplier product description

Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD

Useful information

Supplier parameters

Product code
IPD80R1K2P7
Case
PG-TO252-3
Drain current
3.1A
Drain-source voltage
800V
Gate charge
11nC
Gate-source voltage
±20V
Kind of channel
enhancement
Manufacturer
INFINEON TECHNOLOGIES
Mounting
SMD
On-state resistance
1.2Ω
Polarisation
unipolar
Power dissipation
37W
Technology
CoolMOS™ P7
Type of transistor
N-MOSFET
Version
ESD
Brand
INFINEON TECHNOLOGIES
Supplier's product code
IPD80R1K2P7
Product ID
U-216896
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .