Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268 IXYS

Product Code: IXBT16N170A
The photo is for illustration only. Please refer to the description for exact product specifications.
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Price range

AmountPrice with tax (pcs)
1-2
20.4020.40
3-9
20.20
10+
19.25
wholesale

Min. qty: 1

Multiplier: 1

Total:

20.40
2025-12-25 Estimated delivery

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Product description

Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268 IXYS

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Specifications

SKU
U-220342
Brand
Product code
IXBT16N170A

Supplier product description

Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268

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Supplier parameters

Supplier's product code
IXBT16N170A
Product ID
U-220342
Case
TO268
Collector current
10A
Collector-emitter voltage
1.7kV
Features of semiconductor devices
high voltage
Gate charge
65nC
Gate-emitter voltage
±20V
Kind of package
tube
Manufacturer
IXYS
Mounting
SMD
Power dissipation
150W
Pulsed collector current
40A
Technology
BiMOSFET™
Type of transistor
IGBT
Turn-off time
370ns
Turn-on time
43ns
Product code
IXBT16N170A
Brand
IXYS
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