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Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 BASiC SEMICONDUCTOR

Product Code: BGH50N65HS1
The photo is for illustration only. Please refer to the description for exact product specifications.

Price range

AmountPrice with tax (pcs)
1-4
15.5515.55
5-29
14.00
30-149
12.35
150+
11.85
wholesale

Min. qty: 1

Multiplier: 1

Total:

15.55
2025-07-25 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Warehouse in Europe

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Product description

Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 BASiC SEMICONDUCTOR

Useful information


Specifications

SKU
U-2710904
Product code
BGH50N65HS1

Supplier product description

Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3

Useful information

Supplier parameters

Product code
BGH50N65HS1
Supplier's product code
BGH50N65HS1
Product ID
U-2710904
Case
TO247-3
Collector current
50A
Collector-emitter voltage
650V
Features of semiconductor devices
integrated anti-parallel diode
Gate charge
308nC
Gate-emitter voltage
±20V
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
Power dissipation
357W
Pulsed collector current
200A
Technology
Trench
Type of transistor
IGBT
Turn-off time
256ns
Turn-on time
54ns
Brand
BASiC SEMICONDUCTOR
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .