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Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A SHINDENGEN

Product Code: P0R5B60HP2-5071
The photo is for illustration only. Please refer to the description for exact product specifications.

Price range

AmountPrice with tax (pcs)
1-2
0.900.90
3-9
0.75
10-24
0.55
25-99
0.50
100+
0.40
wholesale

Min. qty: 1

Multiplier: 1

Total:

0.90
2025-08-21 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A SHINDENGEN

Useful information


Specifications

SKU
U-1937078
Product code
P0R5B60HP2-5071

Supplier product description

Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A

Useful information

Supplier parameters

Product code
P0R5B60HP2-5071
Supplier's product code
P0R5B60HP2-5071
Product ID
U-1937078
Case
FB (TO252AA)
Drain current
0.5A
Drain-source voltage
600V
Gate charge
4.3nC
Gate-source voltage
±30V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
SHINDENGEN
Mounting
SMD
On-state resistance
10Ω
Polarisation
unipolar
Power dissipation
35W
Pulsed drain current
2A
Technology
Hi-PotMOS2
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .