Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 ROHM SEMICONDUCTOR
Product Code: SCT3120ALGC11
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 ROHM SEMICONDUCTOR
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Supplier parameters
Product code
SCT3120ALGC11
Product ID
U-2966387
Case
TO247
Drain current
21A
Drain-source voltage
650V
Gate charge
38nC
Gate-source voltage
-4...22V
Kind of channel
enhancement
Kind of package
tube
Manufacturer
ROHM SEMICONDUCTOR
Mounting
THT
On-state resistance
156mΩ
Polarisation
unipolar
Power dissipation
103W
Pulsed drain current
52A
Technology
SiC
Type of transistor
N-MOSFET
Brand
ROYAL OHM
Supplier's product code
SCT3120ALGC11
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .