Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Useful information
Supplier parameters
Product code
B2M065120H
Supplier's product code
B2M065120H
Product ID
U-3054956
Case
TO247-3
Drain current
33A
Drain-source voltage
1.2kV
Gate charge
60nC
Gate-source voltage
-4...18V
Kind of channel
enhancement
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
On-state resistance
65mΩ
Polarisation
unipolar
Power dissipation
250W
Pulsed drain current
85A
Technology
SiC
Type of transistor
N-MOSFET
Brand
BASiC SEMICONDUCTOR
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .