Transistor: N-MOSFET; SiC; unipolar; 1.4kV; 90A; Idm: 225A; 600W BASiC SEMICONDUCTOR
Product Code: B3M020140ZL
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.4kV; 90A; Idm: 225A; 600W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.4kV; 90A; Idm: 225A; 600W
Useful information
Supplier parameters
Product code
B3M020140ZL
Product ID
U-5013925
Case
TO247-4
Drain current
90A
Drain-source voltage
1.4kV
Features of semiconductor devices
Kelvin terminal
Gate charge
183nC
Gate-source voltage
-5...18V
Kind of channel
enhancement
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
On-state resistance
20mΩ
Polarisation
unipolar
Power dissipation
600W
Pulsed drain current
225A
Technology
SiC
Type of transistor
N-MOSFET
Brand
BASiC SEMICONDUCTOR
Supplier's product code
B3M020140ZL
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