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Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W BASiC SEMICONDUCTOR

Product Code: B2M600170HH
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Product description

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W BASiC SEMICONDUCTOR

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Specifications

SKU
U-5013920
Product code
B2M600170HH

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W

Useful information

Supplier parameters

Supplier's product code
B2M600170HH
Product ID
U-5013920
Case
TO247-3
Drain current
5A
Drain-source voltage
1.7kV
Gate charge
14nC
Gate-source voltage
-4...18V
Kind of channel
enhancement
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
On-state resistance
0.6Ω
Polarisation
unipolar
Power dissipation
75W
Pulsed drain current
10A
Technology
SiC
Type of transistor
N-MOSFET
Product code
B2M600170HH
Brand
BASiC SEMICONDUCTOR
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .