Transistor: N-MOSFET; SiC; unipolar; 650V; 88A; Idm: 197A; 500W BASiC SEMICONDUCTOR
Product Code: B3M025065H
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Product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 88A; Idm: 197A; 500W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 88A; Idm: 197A; 500W
Useful information
Supplier parameters
Product ID
U-5013926
Case
TO247-3
Drain current
88A
Drain-source voltage
650V
Gate charge
98nC
Gate-source voltage
-5...18V
Kind of channel
enhancement
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
On-state resistance
25mΩ
Polarisation
unipolar
Power dissipation
500W
Pulsed drain current
197A
Technology
SiC
Type of transistor
N-MOSFET
Product code
B3M025065H
Brand
BASiC SEMICONDUCTOR
Supplier's product code
B3M025065H
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