Transistor: N-MOSFET; SiC; unipolar; 750V; 169A; Idm: 480A; 750W BASiC SEMICONDUCTOR
Product Code: B3M010C075Z
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Product description
Transistor: N-MOSFET; SiC; unipolar; 750V; 169A; Idm: 480A; 750W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 750V; 169A; Idm: 480A; 750W
Useful information
Supplier parameters
Product code
B3M010C075Z
Brand
BASiC SEMICONDUCTOR
Supplier's product code
B3M010C075Z
Product ID
U-5013922
Case
TO247-4
Drain current
169A
Drain-source voltage
750V
Features of semiconductor devices
Kelvin terminal
Gate charge
0.22µC
Gate-source voltage
-5...18V
Kind of channel
enhancement
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
On-state resistance
10mΩ
Polarisation
unipolar
Power dissipation
750W
Pulsed drain current
480A
Technology
SiC
Type of transistor
N-MOSFET
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