Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 60W BASiC SEMICONDUCTOR
Product Code: B2M600170R
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 60W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 60W
Useful information
Supplier parameters
Product code
B2M600170R
Supplier's product code
B2M600170R
Product ID
U-5009478
Case
TO263-7
Drain current
4A
Drain-source voltage
1.7kV
Features of semiconductor devices
Kelvin terminal
Gate charge
14nC
Gate-source voltage
-4...18V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
BASiC SEMICONDUCTOR
Mounting
SMD
On-state resistance
0.6Ω
Polarisation
unipolar
Power dissipation
60W
Pulsed drain current
10A
Technology
SiC
Type of transistor
N-MOSFET
Brand
BASiC SEMICONDUCTOR
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