Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 66A; Idm: 168A; 428W BASiC SEMICONDUCTOR
Product Code: B2M030120R
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 66A; Idm: 168A; 428W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 66A; Idm: 168A; 428W
Useful information
Supplier parameters
Product code
B2M030120R
Product ID
U-5009474
Case
TO263-7
Drain current
66A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
115nC
Gate-source voltage
-4...18V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
BASiC SEMICONDUCTOR
Mounting
SMD
On-state resistance
30mΩ
Polarisation
unipolar
Power dissipation
428W
Pulsed drain current
168A
Technology
SiC
Type of transistor
N-MOSFET
Brand
BASiC SEMICONDUCTOR
Supplier's product code
B2M030120R
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