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Product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W STMicroelectronics
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Supplier parameters
Product code
SCTW35N65G2V
Supplier's product code
SCTW35N65G2V
Product ID
U-2738363
Case
HIP247™
Drain current
45A
Drain-source voltage
650V
Gate charge
73nC
Gate-source voltage
-10...22V
Kind of channel
enhancement
Kind of package
tube
Manufacturer
STMicroelectronics
Mounting
THT
On-state resistance
68mΩ
Polarisation
unipolar
Power dissipation
240W
Pulsed drain current
90A
Technology
SiC
Type of transistor
N-MOSFET
Brand
STMicroelectronics
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