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Product description
Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; ESD VISHAY
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; ESD
Useful information
Supplier parameters
Product code
SIHD2N80AE-GE3
Supplier's product code
SIHD2N80AE-GE3
Product ID
U-1900562
Case
DPAK
Drain current
1.8A
Drain-source voltage
800V
Gate charge
10.5nC
Gate-source voltage
±30V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
2.5Ω
Polarisation
unipolar
Power dissipation
62.5W
Pulsed drain current
3.6A
Type of transistor
N-MOSFET
Version
ESD
Brand
VISHAY
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