Transistor: N-MOSFET; Trench; unipolar; 60V; 720mA; Idm: 2.9A; 420mW NEXPERIA
Product Code: 2N7002KQBZ
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Product description
Transistor: N-MOSFET; Trench; unipolar; 60V; 720mA; Idm: 2.9A; 420mW NEXPERIA
Specifications
Supplier product description
Transistor: N-MOSFET; Trench; unipolar; 60V; 720mA; Idm: 2.9A; 420mW
Supplier parameters
Product code
2N7002KQBZ
Supplier's product code
2N7002KQBZ
Product ID
U-3995420
Case
DFN1010D-3
Drain current
720mA
Drain-source voltage
60V
Gate charge
610pC
Gate-source voltage
±16V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
0.85Ω
Polarisation
unipolar
Power dissipation
0.42W
Pulsed drain current
2.9A
Technology
Trench
Type of transistor
N-MOSFET
Version
ESD
Brand
NEXPERIA
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