Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W VISHAY
Product Code: SIRA06DP-T1-GE3
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Product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W VISHAY
Specifications
Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W
Supplier parameters
Product code
SIRA06DP-T1-GE3
Supplier's product code
SIRA06DP-T1-GE3
Product ID
U-3046099
Case
PowerPAK® SO8
Drain current
40A
Drain-source voltage
30V
Gate charge
77nC
Gate-source voltage
-16...20V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
3.5mΩ
Polarisation
unipolar
Power dissipation
40W
Pulsed drain current
80A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Brand
VISHAY
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