Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.8W; ESD VISHAY
Specifications
Supplier product description
Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.8W; ESD
Supplier parameters
Product code
SI1401EDH-T1-GE3
Supplier's product code
SI1401EDH-T1-GE3
Product ID
U-3825385
Case
SC70
Drain current
-4A
Drain-source voltage
-12V
Gate charge
36nC
Gate-source voltage
±10V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
34mΩ
Polarisation
unipolar
Power dissipation
1.8W
Pulsed drain current
-25A
Type of transistor
P-MOSFET
Version
ESD
Brand
VISHAY
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .