Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W BASiC SEMICONDUCTOR
Product Code: AB2M040120R
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W
Useful information
Supplier parameters
Product code
AB2M040120R
Product ID
U-5009470
Application
automotive industry
Case
TO263-7
Drain current
41A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
90nC
Gate-source voltage
-4...18V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
BASiC SEMICONDUCTOR
Mounting
SMD
On-state resistance
40mΩ
Polarisation
unipolar
Power dissipation
238W
Pulsed drain current
123A
Technology
SiC
Type of transistor
N-MOSFET
Brand
BASiC SEMICONDUCTOR
Supplier's product code
AB2M040120R
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